Small-Signal Impedance and Split C-V Characterization of High-κ SiC Power MOSFETs

High Temperature Modeling and Characterization of 6H SiC MOSFETs

(Abstract) SiC offers the potential to provide high power, high temperature electronics. Our two-dimensional is used to model the current voltage characteristics of a 6H-SiC MOSFET as a function of temperature, from 25C to 200C. (Intro) In our previous paper[1], we developed a new detailed mobility model for Silicon Carbide (SiC) MOSFETs. The new model explicitly accounts for the contribution o...

High temperature pulsed-gate robustness testing of SiC power MOSFETs

Thermal instability effects in SiC Power MOSFETs

Silicon carbide (SiC) power MOSFETs are characterised by potentially thermally unstable behaviour over a broad range of bias conditions. In the past, such behaviour has been shown for silicon (Si) MOSFETs to be related to a reduction of Safe Operating Area at higher drain–source bias voltages. For SiC MOSFETs no characterisation exists yet. This paper presents a thorough experimental investigat...

Modeling and Characterization of 4h-sic Mosfets: High Field, High Temperature, and Transient Effects

Title of Dissertation: MODELING AND CHARACTERIZATION OF 4H-SIC MOSFETS: HIGH FIELD, HIGH TEMPERATURE, AND TRANSIENT EFFECTS Siddharth Potbhare, Doctor of Philosophy, 2008 Directed by: Professor Neil Goldsman Department of Electrical and Computer Engineering We present detailed physics based numerical models for characterizing 4HSilicon Carbide lateral MOSFETs and vertical power DMOSFETs for hig...

Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs

4H-SiC presents great advantages for its use in power electronic devices working at particular conditions. However the development of MOSFETs based on this material is limited by mobility degradation. N-channel SiC MOSFETs were manufactured on p-type epitaxial and pimplanted substrates and the electron mobility in the inversion channels was measured to be correlated with their structural and ch...